FDS6575 vs IRF7351TRPBF Vergleich
Detaillierter Direktvergleich von FDS6575 von onsemi und IRF7351TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | FDS6575 | IRF7351TRPBF |
|---|---|---|
| Marke | onsemi | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,28 | $0,68 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | 60 V |
| Continuous Drain Current (ID) | -10 A | 8 A |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| Gate-Schwellenspannung | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 24 nC |
| Technology | PowerTrench (rugged gate) | IR MOSFET (HEXFET trench) |
| Gehäuse | SOIC-8 (SO-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Configuration | Single MOSFET | Dual N-Channel MOSFET (Half-Bridge) |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS-Status | Compliant | Compliant (PBF suffix = lead-free) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Power Dissipation (PD) | — | 2 W |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| Lead-Free | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL Level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |