FDS6575 vs IRF7351TRPBF 比較
詳細な並列比較: FDS6575 メーカー: onsemi および IRF7351TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | FDS6575 | IRF7351TRPBF |
|---|---|---|
| ブランド | onsemi | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.28 | $0.68 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | 60 V |
| Continuous Drain Current (ID) | -10 A | 8 A |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| ゲートしきい値電圧 | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 24 nC |
| Technology | PowerTrench (rugged gate) | IR MOSFET (HEXFET trench) |
| パッケージ | SOIC-8 (SO-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| 実装タイプ | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | — |
| Configuration | Single MOSFET | Dual N-Channel MOSFET (Half-Bridge) |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS ステータス | Compliant | Compliant (PBF suffix = lead-free) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Power Dissipation (PD) | — | 2 W |
| 動作温度 | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| Lead-Free | — | Yes |
| MSLレベル | — | [DATA_NEEDED: MSL Level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |