FDS6575 vs IRF7351TRPBF 对比
详细并排对比 FDS6575 出自 onsemi 和 IRF7351TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | FDS6575 | IRF7351TRPBF |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.28 | $0.68 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | 60 V |
| Continuous Drain Current (ID) | -10 A | 8 A |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| 栅极阈值电压 | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 24 nC |
| Technology | PowerTrench (rugged gate) | IR MOSFET (HEXFET trench) |
| 封装 | SOIC-8 (SO-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| 安装类型 | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Configuration | Single MOSFET | Dual N-Channel MOSFET (Half-Bridge) |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS 状态 | Compliant | Compliant (PBF suffix = lead-free) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Power Dissipation (PD) | — | 2 W |
| 工作温度 | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| Lead-Free | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |