FDS6575 vs IRF7351TRPBF Comparison
Detailed side-by-side comparison of FDS6575 by onsemi and IRF7351TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | FDS6575 | IRF7351TRPBF |
|---|---|---|
| Brand | onsemi | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.28 | $0.68 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -20 V | 60 V |
| Continuous Drain Current (ID) | -10 A | 8 A |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | β |
| Gate Drive Voltage Range | 2.5 V to 8 V | β |
| Gate Threshold Voltage | [DATA_NEEDED: gate threshold voltage range] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 24 nC |
| Technology | PowerTrench (rugged gate) | IR MOSFET (HEXFET trench) |
| Package | SOIC-8 (SO-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Configuration | Single MOSFET | Dual N-Channel MOSFET (Half-Bridge) |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | β |
| RoHS Status | Compliant | Compliant (PBF suffix = lead-free) |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF7351TRPBF |
| On-Resistance RDS(on) max | β | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | β | 0.0137 ohm (13.7 mOhm) |
| Power Dissipation (PD) | β | 2 W |
| Operating Temperature | β | -55C to +150C (junction) |
| Typical Application | β | Synchronous Rectifier for Isolated DC-DC Converters |
| Lead-Free | β | Yes |
| MSL Level | β | [DATA_NEEDED: MSL Level] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min] |