H5AN8G8NCJR-UHC vs K4A8G085WB-BCWE Vergleich
Detaillierter Direktvergleich von H5AN8G8NCJR-UHC von SK hynix und K4A8G085WB-BCWE von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NCJR-UHC | K4A8G085WB-BCWE |
|---|---|---|
| Marke | SK hynix | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,88 | $12,30 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Gehäuse | FBGA-78 | 78-ball FBGA |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| RoHS Code | Yes | — |
| REACH Compliance | Yes (per distributor record) | — |
| Lead-Free | Yes (family documented as Lead-Free & Halogen-Free) | — |
| Halogenfrei | Yes | — |
| Part Life Cycle Code | Active | — |
| Access Type | Synchronous, both clock edges (DDR) | — |
| Memory Configuration | Bank-group architecture DDR4 | — |
| Die Revision | CJR (C-die family) | — |
| Manufacturer | SK hynix Inc. | — |
| Datenrate | — | 3200 Mbps |
| Die Classification | — | B-die |
| Schnittstelle | — | DDR4 (SSTL12) |
| Application Domain | — | Server, industrial control, networking, embedded systems |
| VREF AC-Noise Derating | — | +/-1% of VDD included in timing deratings |
| RoHS-Status | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Package Body Size | — | [DATA_NEEDED: package dimensions in mm] |