H5AN8G8NCJR-UHC vs K4A8G085WB-BCWE 对比
详细并排对比 H5AN8G8NCJR-UHC 出自 SK hynix 和 K4A8G085WB-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-UHC | K4A8G085WB-BCWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.88 | $12.30 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 封装 | FBGA-78 | 78-ball FBGA |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| RoHS Code | Yes | — |
| REACH Compliance | Yes (per distributor record) | — |
| Lead-Free | Yes (family documented as Lead-Free & Halogen-Free) | — |
| 无卤 | Yes | — |
| Part Life Cycle Code | Active | — |
| Access Type | Synchronous, both clock edges (DDR) | — |
| Memory Configuration | Bank-group architecture DDR4 | — |
| Die Revision | CJR (C-die family) | — |
| Manufacturer | SK hynix Inc. | — |
| 数据速率 | — | 3200 Mbps |
| Die Classification | — | B-die |
| 接口 | — | DDR4 (SSTL12) |
| Application Domain | — | Server, industrial control, networking, embedded systems |
| VREF AC-Noise Derating | — | +/-1% of VDD included in timing deratings |
| RoHS 状态 | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Package Body Size | — | [DATA_NEEDED: package dimensions in mm] |