H5AN8G8NCJR-UHC vs K4A8G085WB-BCWE Comparación
Comparación detallada lado a lado de H5AN8G8NCJR-UHC por SK hynix y K4A8G085WB-BCWE por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN8G8NCJR-UHC | K4A8G085WB-BCWE |
|---|---|---|
| Marca | SK hynix | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,88 | $12,30 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organización de memoria | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Encapsulado | FBGA-78 | 78-ball FBGA |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| RoHS Code | Yes | — |
| REACH Compliance | Yes (per distributor record) | — |
| Lead-Free | Yes (family documented as Lead-Free & Halogen-Free) | — |
| Sin halógenos | Yes | — |
| Part Life Cycle Code | Active | — |
| Access Type | Synchronous, both clock edges (DDR) | — |
| Memory Configuration | Bank-group architecture DDR4 | — |
| Die Revision | CJR (C-die family) | — |
| Manufacturer | SK hynix Inc. | — |
| Velocidad de datos | — | 3200 Mbps |
| Die Classification | — | B-die |
| Interfaz | — | DDR4 (SSTL12) |
| Application Domain | — | Server, industrial control, networking, embedded systems |
| VREF AC-Noise Derating | — | +/-1% of VDD included in timing deratings |
| Estado RoHS | — | [DATA_NEEDED: RoHS compliance statement] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Package Body Size | — | [DATA_NEEDED: package dimensions in mm] |