H5ANAG6NBJR-UHC vs K4A4G165WF-BCTD Vergleich
Detaillierter Direktvergleich von H5ANAG6NBJR-UHC von SK hynix und K4A4G165WF-BCTD von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NBJR-UHC | K4A4G165WF-BCTD |
|---|---|---|
| Marke | SK hynix | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | — | In Stock |
| Stückpreis (USD) | — | $8,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Speicherorganisation | 256M x 16 | 256M x 16 |
| Schnittstelle | DDR4 (CMOS) | SSTL-12 |
| Gehäuse | PBGA96 / FBGA-96 (TFBGA) | FBGA-96 (PBGA96) |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| Betriebstemperatur | -40C to +95C | 0C to +95C |
| Refresh | Auto / Self Refresh | Self-refresh and auto-refresh supported |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | — |
| Write Leveling | Supported | — |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS-Status | RoHS Compliant | Compliant |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| Speichergröße | — | 4 Gbit |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Montageart | — | Surface Mount |
| Eigenschaften | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |