H5ANAG6NBJR-UHC vs K4A4G165WF-BCTD 对比
详细并排对比 H5ANAG6NBJR-UHC 出自 SK hynix 和 K4A4G165WF-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NBJR-UHC | K4A4G165WF-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | — | 有库存 |
| 单价（USD） | — | $8.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 接口 | DDR4 (CMOS) | SSTL-12 |
| 封装 | PBGA96 / FBGA-96 (TFBGA) | FBGA-96 (PBGA96) |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| 工作温度 | -40C to +95C | 0C to +95C |
| Refresh | Auto / Self Refresh | Self-refresh and auto-refresh supported |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | — |
| Write Leveling | Supported | — |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS 状态 | RoHS Compliant | Compliant |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| 存储容量 | — | 4 Gbit |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| 安装类型 | — | Surface Mount |
| 特性 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |