H5ANAG6NBJR-UHC vs K4A4G165WF-BCTD Comparison
Detailed side-by-side comparison of H5ANAG6NBJR-UHC by SK hynix and K4A4G165WF-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5ANAG6NBJR-UHC | K4A4G165WF-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $8.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Interface | DDR4 (CMOS) | SSTL-12 |
| Package | PBGA96 / FBGA-96 (TFBGA) | FBGA-96 (PBGA96) |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| Operating Temperature | -40C to +95C | 0C to +95C |
| Refresh | Auto / Self Refresh | Self-refresh and auto-refresh supported |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | — |
| Write Leveling | Supported | — |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS Status | RoHS Compliant | Compliant |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| Memory Size | — | 4 Gbit |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Mounting Type | — | Surface Mount |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |