IPB120P04P4L03ATMA2 vs IPD90P04P405ATMA2 Vergleich
Detaillierter Direktvergleich von IPB120P04P4L03ATMA2 von Infineon und IPD90P04P405ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB120P04P4L03ATMA2 | IPD90P04P405ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,74 | $0,69 |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th) range] |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK, surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant (per Infineon product page) | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (Tj) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |