IPB120P04P4L03ATMA2 vs IPD90P04P405ATMA2 Comparación
Comparación detallada lado a lado de IPB120P04P4L03ATMA2 por Infineon y IPD90P04P405ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB120P04P4L03ATMA2 | IPD90P04P405ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,74 | $0,69 |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th) range] |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| Recuento de pines | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Nivel MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant (per Infineon product page) | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (Tj) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |