IPB120P04P4L03ATMA2 vs IPD90P04P405ATMA2 对比
详细并排对比 IPB120P04P4L03ATMA2 出自 Infineon 和 IPD90P04P405ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ 量产中
规格对比
| 参数 | IPB120P04P4L03ATMA2 | IPD90P04P405ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.74 | $0.69 |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th) range] |
| 工作结温 | -55C to +175C | — |
| 封装 | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK, surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| 引脚数量 | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant (per Infineon product page) | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| 工作温度范围 | — | -55 °C to +175 °C (Tj) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |