IPB180P04P4L02ATMA2 vs IPD50P04P413ATMA2 Vergleich
Detaillierter Direktvergleich von IPB180P04P4L02ATMA2 von Infineon und IPD50P04P413ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB180P04P4L02ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $0,42 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-P2 | — |
| Transistortyp | P-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction) | -55 °C to +175 °C |
| Gehäuse | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-313 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 7 (6 + tab) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS-Status | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | — |
| Polarity / Device Type | — | P-Channel MOSFET |
| Technology | — | OptiMOS-P2 (Trench) |
| Continuous Drain Current (TC=25°C, ID) | — | 50 A |
| Continuous Drain Current (TC=100°C, ID) | — | [DATA_NEEDED: ID @ 100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (TC=25°C, Ptot) | — | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | — | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Maximum Junction Temperature (TJ,max) | — | 175 °C |
| Standard Pack Quantity (13" reel) | — | 2500 pcs |