IPB180P04P4L02ATMA2 vs IPD50P04P413ATMA2 Comparison
Detailed side-by-side comparison of IPB180P04P4L02ATMA2 by Infineon and IPD50P04P413ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 β Active
Specification Comparison
| Parameter | IPB180P04P4L02ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $0.42 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS-P2 | β |
| Transistor Type | P-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID) at Tc | 180 A | β |
| Power Dissipation (PD) at Tc | 150 W | β |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55 Β°C to +175 Β°C |
| Package | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 7 (6 + tab) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS Status | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | β |
| Polarity / Device Type | β | P-Channel MOSFET |
| Technology | β | OptiMOS-P2 (Trench) |
| Continuous Drain Current (TC=25Β°C, ID) | β | 50 A |
| Continuous Drain Current (TC=100Β°C, ID) | β | [DATA_NEEDED: ID @ 100Β°C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (TC=25Β°C, Ptot) | β | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | β | 9.2 mΞ© (typ) / 12.6 mΞ© (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | β | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Maximum Junction Temperature (TJ,max) | β | 175 Β°C |
| Standard Pack Quantity (13" reel) | β | 2500 pcs |