IPB180P04P4L02ATMA2 vs IPD50P04P413ATMA2 对比

详细并排对比 IPB180P04P4L02ATMA2 出自 Infineon 和 IPD50P04P413ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD50P04P413ATMA2 IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 ✓ 量产中

规格对比

参数 IPB180P04P4L02ATMA2 IPD50P04P413ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.85 $0.42
Manufacturer Infineon Technologies —
Series OptiMOS-P2 —
晶体管类型 P-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V -40 V
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Tc 150 W —
On-State Resistance RDS(on) max 2.4 mOhm at VGS = -10 V (per Infineon product page) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
工作温度范围 -55 C to +175 C (junction) -55 °C to +175 °C
封装 PG-TO263-7-3 (D2PAK-6, 7-pin) PG-TO252-3-313 (DPAK)
安装类型 Surface Mount Surface Mount
引脚数量 7 (6 + tab) —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
MSL 等级 [DATA_NEEDED: MSL rating] 1
RoHS 状态 Compliant (per Infineon product page) Compliant
Tab Connection Drain —
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max — ±20 V
Maximum Junction Temperature (TJ,max) — 175 °C
Standard Pack Quantity (13" reel) — 2500 pcs

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