IPB180P04P4L02ATMA2 vs IPD50P04P413ATMA2 Comparaison
Comparaison détaillée côte à côte de IPB180P04P4L02ATMA2 par Infineon et IPD50P04P413ATMA2 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ Actif
Comparaison des spécifications
| Paramètre | IPB180P04P4L02ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,85 | $0,42 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-P2 | — |
| Type de transistor | P-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Plage de température de fonctionnement | -55 C to +175 C (junction) | -55 °C to +175 °C |
| Boîtier | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-313 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 7 (6 + tab) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 |
| Statut RoHS | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | — |
| Polarity / Device Type | — | P-Channel MOSFET |
| Technology | — | OptiMOS-P2 (Trench) |
| Continuous Drain Current (TC=25°C, ID) | — | 50 A |
| Continuous Drain Current (TC=100°C, ID) | — | [DATA_NEEDED: ID @ 100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (TC=25°C, Ptot) | — | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | — | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Maximum Junction Temperature (TJ,max) | — | 175 °C |
| Standard Pack Quantity (13" reel) | — | 2500 pcs |