IPD046N08N5ATMA1 vs IPD78CN10NGATMA1 Vergleich
Detaillierter Direktvergleich von IPD046N08N5ATMA1 von Infineon und IPD78CN10NGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD046N08N5ATMA1 | IPD78CN10NGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | 78 mOhm |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Betriebs-Sperrschichttemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse / Bauform | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 2 Power-Transistor |
| RoHS-Status | ROHS3 Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Series | — | OptiMOS 2 |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) Max at Tc=25C | — | 31 W |
| Operating Junction Temperature Max | — | 175 C |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | — | Pb-free (Matte Tin) |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified per JEDEC1 for target application |