IPD046N08N5ATMA1 vs IPD78CN10NGATMA1 Comparison
Detailed side-by-side comparison of IPD046N08N5ATMA1 by Infineon and IPD78CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD046N08N5ATMA1 | IPD78CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | 78 mOhm |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Operating Junction Temperature Range | -55 °C to +175 °C | — |
| Package / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 2 Power-Transistor |
| RoHS Status | ROHS3 Compliant | — |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Series | — | OptiMOS 2 |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) Max at Tc=25C | — | 31 W |
| Operating Junction Temperature Max | — | 175 C |
| Pin Count | — | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | — | Pb-free (Matte Tin) |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified per JEDEC1 for target application |