IPD046N08N5ATMA1 vs IPD78CN10NGATMA1 对比
详细并排对比 IPD046N08N5ATMA1 出自 Infineon 和 IPD78CN10NGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD046N08N5ATMA1 | IPD78CN10NGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | 78 mOhm |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| 工作结温范围 | -55 °C to +175 °C | — |
| 封装 / 外壳 | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 2 Power-Transistor |
| RoHS 状态 | ROHS3 Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Series | — | OptiMOS 2 |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) Max at Tc=25C | — | 31 W |
| Operating Junction Temperature Max | — | 175 C |
| 引脚数量 | — | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | — | Pb-free (Matte Tin) |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified per JEDEC1 for target application |