IPD50N06S409ATMA2 vs IPD038N06N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD50N06S409ATMA2 von Infineon und IPD038N06N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD50N06S409ATMA2 | IPD038N06N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,65 |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A | 90 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Pin-Anzahl | 3 (2 + Tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| FET Type | — | N-Channel MOSFET |
| Series | — | OptiMOS 60V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | — | 188 W |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| MSL-Level | — | 1 |
| Halogenfrei | — | Yes |
| Lead-Free | — | Yes |
| Polarity | — | N-Channel |