IPD50N06S409ATMA2 vs IPD038N06N3GATMA1 Comparison

Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD038N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD038N06N3GATMA1 IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon

IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon

IPD038N06N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N06S409ATMA2 IPD038N06N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.65
Technology N-Channel MOSFET (OptiMOS) OptiMOS trench MOSFET
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 50 A 90 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 4 V (typ)
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (Pd) at Tc 71 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-11 (DPAK) PG-TO252-3 (DPAK)
Pin Count 3 (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] β€”
FET Type β€” N-Channel MOSFET
Series β€” OptiMOS 60V
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) β€” Β±20 V
On-Resistance (RDS(on)) at VGS=10V β€” 3.8 mΞ©
Total Power Dissipation (PD) at Tc β€” 188 W
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
MSL Level β€” 1
Halogen-Free β€” Yes
Lead-Free β€” Yes
Polarity β€” N-Channel

Datasheets & Resources

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