IPD50N06S409ATMA2 vs IPD038N06N3GATMA1 Comparison
Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD038N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50N06S409ATMA2 | IPD038N06N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A | 90 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Pin Count | 3 (2 + Tab) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| FET Type | — | N-Channel MOSFET |
| Series | — | OptiMOS 60V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | — | 188 W |
| Operating Temperature Range | — | [DATA_NEEDED: operating temperature range] |
| MSL Level | — | 1 |
| Halogen Free | — | Yes |
| Lead-Free | — | Yes |
| Polarity | — | N-Channel |