IPD70N10S3L12ATMA2 vs IPD50N06S409ATMA2 Vergleich

Detaillierter Direktvergleich von IPD70N10S3L12ATMA2 von Infineon und IPD50N06S409ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD70N10S3L12ATMA2 IPD50N06S409ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $0,49
Manufacturer Infineon Technologies —
Part Number IPD70N10S3L12ATMA2 —
Technology OptiMOS-T (N-Channel Trench MOSFET) N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at TC 70 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
On-State Resistance R_DS(on) typ @ VGS=10V 11.5 mOhm —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD at TC 125 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C -55 °C to +175 °C
Gehäuse PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL level] —
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Pin-Anzahl — 3 (2 + Tab)
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

Datenblätter & Ressourcen

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