IPD70N10S3L12ATMA2 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD70N10S3L12ATMA2 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD70N10S3L12ATMA2 IPD70N10S3L12ATMA2 - 100V N-Ch OptiMOS 11.5mOhm 70A | Infineon

IPD70N10S3L12ATMA2 - 100V N-Ch OptiMOS 11.5mOhm 70A | Infineon

IPD70N10S3L12ATMA2 βœ“ Active

Specification Comparison

Parameter IPD70N10S3L12ATMA2 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $0.49
Manufacturer Infineon Technologies β€”
Part Number IPD70N10S3L12ATMA2 β€”
Technology OptiMOS-T (N-Channel Trench MOSFET) N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at TC 70 A β€”
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
On-State Resistance R_DS(on) typ @ VGS=10V 11.5 mOhm β€”
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] β€”
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Power Dissipation PD at TC 125 W β€”
Operating Junction Temperature -55 C to +175 C -55 Β°C to +175 Β°C
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] β€”
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Pin Count β€” 3 (2 + Tab)
Automotive Qualification β€” AEC-Q101
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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