IPD70N10S3L12ATMA2 vs IPD50N06S409ATMA2 比較
詳細な並列比較: IPD70N10S3L12ATMA2 メーカー: Infineon および IPD50N06S409ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD70N10S3L12ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.86 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD70N10S3L12ATMA2 | — |
| Technology | OptiMOS-T (N-Channel Trench MOSFET) | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TC | 70 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max rating] |
| On-State Resistance R_DS(on) typ @ VGS=10V | 11.5 mOhm | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD at TC | 125 W | — |
| 動作接合温度 | -55 C to +175 C | -55 °C to +175 °C |
| パッケージ | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL level] | — |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| ピン数 | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |