IPL60R105P7AUMA1 vs IPD60R360P7SAUMA1 Vergleich
Detaillierter Direktvergleich von IPL60R105P7AUMA1 von Infineon und IPD60R360P7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPL60R105P7AUMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C (junction) |
| Gehäuse | PG-VSON-4 (4-pin SMD with exposed pad) | — |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC | — | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | — | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK) |
| Anzahl der Pins | — | 3 |