IPLU300N04S41R1XTMA1 vs IAUC100N04S6N028ATMA1 Vergleich
Detaillierter Direktvergleich von IPLU300N04S41R1XTMA1 von Infineon und IAUC100N04S6N028ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ AktivInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPLU300N04S41R1XTMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,45 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPLU300N04S41R1XTMA1 | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | OptiMOS (Trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 300 A | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 300 W | — |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΩ | — |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Betriebs-Sperrschichttemperatur | 175 °C | — |
| Peak Reflow Temperature (AEC-Q) | 260 °C | — |
| Gehäuse | PG-HSOF-8-1 (8-PowerSFN, surface mount) | PG-TDSON-8 (TDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS Compliance | Yes (Green Product) | — |
| Lead-Free | Yes (100% lead-free) | — |
| Configuration | Single with built-in diode | — |
| Packing | Tape & Reel (TR) | — |
| Series | — | OptiMOS 6 40V |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes |
| RoHS-Status | — | Compliant |