IPLU300N04S41R1XTMA1 vs IAUC100N04S6N028ATMA1 Comparison

Detailed side-by-side comparison of IPLU300N04S41R1XTMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPLU300N04S41R1XTMA1

IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΞ© Automotive MOSFET | Infineon

IPLU300N04S41R1XTMA1 βœ“ Active
Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 βœ“ Active

Specification Comparison

Parameter IPLU300N04S41R1XTMA1 IAUC100N04S6N028ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.45 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPLU300N04S41R1XTMA1 β€”
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS (Trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (V<sub>DS</sub>) 40 V β€”
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) 300 A β€”
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) 300 W β€”
R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) 1.15 mΞ© β€”
Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) 151 nC β€”
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) 12,090 pF β€”
Gate-Source Voltage (V<sub>GS</sub>) Β±20 V β€”
Operating Junction Temperature 175 Β°C β€”
Peak Reflow Temperature (AEC-Q) 260 Β°C β€”
Package PG-HSOF-8-1 (8-PowerSFN, surface mount) PG-TDSON-8 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Avalanche Rating 100% Avalanche Tested β€”
RoHS Compliance Yes (Green Product) β€”
Lead-Free Yes (100% lead-free) β€”
Configuration Single with built-in diode β€”
Packing Tape & Reel (TR) β€”
Series β€” OptiMOS 6 40V
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D) at T_C=25Β°C β€” 100 A
Pulsed Drain Current (I_DM) β€” 400 A
R_DS(on) max @ V_GS=10V β€” 2.8 mΞ© (typical)
Gate Threshold Voltage (V_GS(th)) β€” 1.5 V to 2.5 V
Total Gate Charge (Q_g) β€” [DATA_NEEDED: Q_g in nC]
Power Dissipation (P_D) at T_C=25Β°C β€” 62 W
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Automotive Qualified β€” Yes
RoHS Status β€” Compliant

Datasheets & Resources

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