IPP069N20NM6AKSA1 vs IRFH5015TRPBF Vergleich
Detaillierter Direktvergleich von IPP069N20NM6AKSA1 von Infineon und IRFH5015TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPP069N20NM6AKSA1 | IRFH5015TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,10 | $0,62 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 56 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | 10 A |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Gehäuse | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | 8-PQFN (5x6) SuperSO8 |
| Montageart | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | IR MOSFET (HEXFET) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | N/A (through-hole package) | — |
| Tab Connection | Electrically connected to Drain | — |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Betriebstemperatur | — | -55C to +150C (TJ max) |