IPP069N20NM6AKSA1 vs IRFH5015TRPBF Comparison

Detailed side-by-side comparison of IPP069N20NM6AKSA1 by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH5015TRPBF

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF βœ“ Active

Specification Comparison

Parameter IPP069N20NM6AKSA1 IRFH5015TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.10 $0.62
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 200 V 150 V
Continuous Drain Current (ID) at TC=25C 136 A 56 A
Continuous Drain Current (ID) at TA=25C 15.3 A 10 A
Power Dissipation (PD) at TC=25C 300 W β€”
Power Dissipation (PD) at TA=25C 3.8 W β€”
On-Resistance RDS(on) max at VGS=10V 6.9 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] β€”
Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Total Gate Charge at VGS=10V (Qg) [DATA_NEEDED: Qg value] β€”
Operating Temperature Range -55C to +175C β€”
Package PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) 8-PQFN (5x6) SuperSO8
Mounting Type Through Hole Surface Mount
Technology OptiMOS 6 trench MOSFET IR MOSFET (HEXFET)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level N/A (through-hole package) β€”
Tab Connection Electrically connected to Drain β€”
On-Resistance (RDS(on)) max β€” 31 mOhm
Total Gate Charge (Qg) β€” 33 nC
Power Dissipation (TA=25C) β€” 3.6 W
Power Dissipation (TC=25C) β€” 156 W
Gate Drive Voltage (VGS recommended) β€” 10 V
Configuration β€” Single with built-in body diode
Operating Temperature β€” -55C to +150C (TJ max)

Datasheets & Resources

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