IPP069N20NM6AKSA1 vs IRFH5015TRPBF 对比
详细并排对比 IPP069N20NM6AKSA1 出自 Infineon 和 IRFH5015TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ 量产中
规格对比
| 参数 | IPP069N20NM6AKSA1 | IRFH5015TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.10 | $0.62 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 56 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | 10 A |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| 工作温度范围 | -55C to +175C | — |
| 封装 | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | 8-PQFN (5x6) SuperSO8 |
| 安装类型 | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | IR MOSFET (HEXFET) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | N/A (through-hole package) | — |
| Tab Connection | Electrically connected to Drain | — |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| 工作温度 | — | -55C to +150C (TJ max) |