IPP100N12S305AKSA1 vs IPP045N10N3GXKSA1 Vergleich
Detaillierter Direktvergleich von IPP100N12S305AKSA1 von Infineon und IPP045N10N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPP100N12S305AKSA1 | IPP045N10N3GXKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $2,20 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS trench | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Gepulster Drain-Strom | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | TO-220 (PG-TO220-3-1) | TO-220-3 (PG-TO220-3) through-hole |
| Montageart | Through Hole | Through Hole |
| Pin-Anzahl | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPP045N10N3GXKSA1 |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | — | 100 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | — | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | — | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | — | 214 W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (junction, typical MOSFET limit) |
| RoHS-Status | — | Compliant (per LCSC datasheet excerpt) |
| Lead-Free | — | Yes (Infineon G/GX part suffix) |
| MSL-Level | — | N/A (through-hole package) |