IPP100N12S305AKSA1 vs IPP045N10N3GXKSA1 对比

详细并排对比 IPP100N12S305AKSA1 出自 Infineon 和 IPP045N10N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 量产中

规格对比

参数 IPP100N12S305AKSA1 IPP045N10N3GXKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.05 $2.20
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS trench OptiMOS 3
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 100 A —
脉冲漏极电流 [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
工作结温 -55 °C to +175 °C —
封装 TO-220 (PG-TO220-3-1) TO-220-3 (PG-TO220-3) through-hole
安装类型 Through Hole Through Hole
引脚数量 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) —
Manufacturer — Infineon Technologies
Part Number — IPP045N10N3GXKSA1
Drain-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C — 100 A
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C — [DATA_NEEDED: I_D at TC=100C]
Pulsed Drain Current (I<sub>D,pulse</sub>) — 137 A
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V — 4.5 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 3.5 V (typical, per LCSC listing)
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C — 214 W
工作温度范围 — -55 °C to +175 °C (junction, typical MOSFET limit)
RoHS 状态 — Compliant (per LCSC datasheet excerpt)
Lead-Free — Yes (Infineon G/GX part suffix)
MSL 等级 — N/A (through-hole package)

数据手册与资源

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