IPP100N12S305AKSA1 vs IPP045N10N3GXKSA1 Comparison
Detailed side-by-side comparison of IPP100N12S305AKSA1 by Infineon and IPP045N10N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ ActiveInfineon
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 ✓ ActiveSpecification Comparison
| Parameter | IPP100N12S305AKSA1 | IPP045N10N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS trench | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | TO-220 (PG-TO220-3-1) | TO-220-3 (PG-TO220-3) through-hole |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPP045N10N3GXKSA1 |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | — | 100 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | — | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | — | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | — | 214 W |
| Operating Temperature Range | — | -55 °C to +175 °C (junction, typical MOSFET limit) |
| RoHS Status | — | Compliant (per LCSC datasheet excerpt) |
| Lead-Free | — | Yes (Infineon G/GX part suffix) |
| MSL Level | — | N/A (through-hole package) |