IPP100N12S305AKSA1 vs IPP045N10N3GXKSA1 Comparación
Comparación detallada lado a lado de IPP100N12S305AKSA1 por Infineon y IPP045N10N3GXKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ ActivoInfineon
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPP100N12S305AKSA1 | IPP045N10N3GXKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,05 | $2,20 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS trench | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Corriente de drenador pulsada | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | TO-220 (PG-TO220-3-1) | TO-220-3 (PG-TO220-3) through-hole |
| Tipo de montaje | Through Hole | Through Hole |
| Recuento de pines | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPP045N10N3GXKSA1 |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | — | 100 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | — | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | — | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | — | 214 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (junction, typical MOSFET limit) |
| Estado RoHS | — | Compliant (per LCSC datasheet excerpt) |
| Lead-Free | — | Yes (Infineon G/GX part suffix) |
| Nivel MSL | — | N/A (through-hole package) |