IQDH29NE2LM5CGSCATMA1 vs IAUS260N10S5N019TATMA1 Vergleich
Detaillierter Direktvergleich von IQDH29NE2LM5CGSCATMA1 von Infineon und IAUS260N10S5N019TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQDH29NE2LM5CGSCATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,84 | $2,95 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 trench-gate |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Gehäuse | PG-WHTFN-9-U02 (WHTFN EP) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Pin-Anzahl | 9 | 16 |
| Montageart | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| Betriebstemperaturbereich | — | -55 C to +175 C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |