IQDH29NE2LM5CGSCATMA1 vs IAUS260N10S5N019TATMA1 对比
详细并排对比 IQDH29NE2LM5CGSCATMA1 出自 Infineon 和 IAUS260N10S5N019TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ 量产中规格对比
| 参数 | IQDH29NE2LM5CGSCATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.84 | $2.95 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 trench-gate |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| 封装 | PG-WHTFN-9-U02 (WHTFN EP) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| 引脚数量 | 9 | 16 |
| 安装类型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| 工作温度范围 | — | -55 C to +175 C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |