IR2110SPBF vs IR2010SPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IR2110SPBF tarafından Infineon ve IR2010SPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IR2110SPBF IR2010SPBF
Marka Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Yaşam Döngüsü Durumu Aktif Aktif
Fonksiyon Half-bridge gate driver —
Ağ Yapısı High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL CMOS or LSTTL, down to 3.0 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
İşletim Sıcaklığı Aralığı -40 C to +125 C —
Paket 16-pin SOIC (SO-16, DW suffix) 16-SOIC (SOIC-16)
Montaj Türü Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — Half-Bridge (high + low side)
Number of Drivers — 2 (independent high/low-side outputs)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
İşletim Sıcaklığı — -40C to +150C
Shutdown Feature — Yes (active input)
MSL Seviyesi — [DATA_NEEDED: MSL rating]
RoHS Durumu — Compliant (Pb-free PBF suffix)
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

Dökümanlar & Kaynaklar

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