IR2110SPBF vs IR2010SPBF 比較

詳細並排比較 IR2110SPBF 由 Infineon 與 IR2010SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2110SPBF IR2010SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-bridge gate driver —
拓撲 High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL CMOS or LSTTL, down to 3.0 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
工作溫度範圍 -40 C to +125 C —
封裝 16-pin SOIC (SO-16, DW suffix) 16-SOIC (SOIC-16)
安裝類型 Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — Half-Bridge (high + low side)
Number of Drivers — 2 (independent high/low-side outputs)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
工作溫度 — -40C to +150C
Shutdown Feature — Yes (active input)
MSL 等級 — [DATA_NEEDED: MSL rating]
RoHS 狀態 — Compliant (Pb-free PBF suffix)
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

資料表與資源

瀏覽所有產品 建立 BOM 索取報價