IR2117SPBF vs IR2117STRPBF Vergleich
Detaillierter Direktvergleich von IR2117SPBF von Infineon und IR2117STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IR2117SPBF | IR2117STRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,21 | $0,58 |
| Configuration | Single high-side driver | High-Side Single Channel |
| Driver Type | High-side gate driver (non-inverting) | — |
| Number of Drivers | 1 | — |
| Maximum Offset (Bootstrap) Voltage | 600 V | — |
| Output Current (Source, typ.) | 0.25 A | — |
| Output Current (Sink, typ.) | 0.5 A | — |
| Gate Drive Supply Voltage (VBS) | 10 V to 20 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | CMOS Schmitt-triggered with internal pull-down | — |
| Logic Input Polarity | Non-inverting | — |
| Undervoltage Lockout (UVLO) | Yes | Yes |
| Bootstrap Operation | Yes (floating channel) | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes | — |
| Gehäuse | 8-SOIC (SOIC-8) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +125C | — |
| RoHS-Status | Compliant (PbF suffix) | Compliant |
| Lead Finish | Lead-free (PbF) | — |
| Family | IR2117 / IR2118 series | — |
| Funktion | — | Gate Driver, Non-Inverting |
| Input Logic Compatibility | — | CMOS / TTL |
| Anzahl der Ausgänge | — | 1 |
| Driven Device | — | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Channel Offset Voltage | — | up to +600 V |
| Peak Source Current (IOUT+) | — | 250 mA |
| Peak Sink Current (IOUT-) | — | 500 mA |
| Propagation Delay (Ton/Toff) | — | 125 ns (max) |
| Anstiegszeit | — | 80 ns (typ) |
| Abfallzeit | — | 40 ns (typ) |
| Negative Transient Voltage Tolerance | — | Yes, dV/dt immune |
| Betriebstemperaturbereich | — | -40 C to +125 C |
| Gehäuse / Bauform | — | 8-SOIC (0.154 inch / 3.90 mm width) |
| Lead-Free | — | Yes |
| MSL-Level | — | MSL3 (per JEDEC J-STD-020) |