IR2117SPBF vs IR2117STRPBF Comparación
Comparación detallada lado a lado de IR2117SPBF por Infineon y IR2117STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IR2117SPBF | IR2117STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,21 | $0,58 |
| Configuration | Single high-side driver | High-Side Single Channel |
| Driver Type | High-side gate driver (non-inverting) | — |
| Number of Drivers | 1 | — |
| Maximum Offset (Bootstrap) Voltage | 600 V | — |
| Output Current (Source, typ.) | 0.25 A | — |
| Output Current (Sink, typ.) | 0.5 A | — |
| Gate Drive Supply Voltage (VBS) | 10 V to 20 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | CMOS Schmitt-triggered with internal pull-down | — |
| Logic Input Polarity | Non-inverting | — |
| Undervoltage Lockout (UVLO) | Yes | Yes |
| Bootstrap Operation | Yes (floating channel) | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes | — |
| Encapsulado | 8-SOIC (SOIC-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40C to +125C | — |
| Estado RoHS | Compliant (PbF suffix) | Compliant |
| Lead Finish | Lead-free (PbF) | — |
| Family | IR2117 / IR2118 series | — |
| Función | — | Gate Driver, Non-Inverting |
| Input Logic Compatibility | — | CMOS / TTL |
| Número de salidas | — | 1 |
| Driven Device | — | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Channel Offset Voltage | — | up to +600 V |
| Peak Source Current (IOUT+) | — | 250 mA |
| Peak Sink Current (IOUT-) | — | 500 mA |
| Propagation Delay (Ton/Toff) | — | 125 ns (max) |
| Tiempo de subida | — | 80 ns (typ) |
| Tiempo de bajada | — | 40 ns (typ) |
| Negative Transient Voltage Tolerance | — | Yes, dV/dt immune |
| Rango de temperatura de funcionamiento | — | -40 C to +125 C |
| Encapsulado / Carcasa | — | 8-SOIC (0.154 inch / 3.90 mm width) |
| Lead-Free | — | Yes |
| Nivel MSL | — | MSL3 (per JEDEC J-STD-020) |