IRF7389PBF vs IRF7389TRPBF Vergleich

Detaillierter Direktvergleich von IRF7389PBF von Infineon und IRF7389TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7389PBF IRF7389TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,61 $0,58
Configuration N and P-Channel (complementary half-bridge) Dual N+P Complementary Half-Bridge
Drain-to-Source Voltage N-Ch (V_DSS) 30 V —
Drain-to-Source Voltage P-Ch (V_DSS) -30 V —
Continuous Drain Current N-Ch (I_D) 7.3 A —
Continuous Drain Current P-Ch (I_D) -5.3 A —
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V —
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V —
Total Gate Charge N-Ch (Q_g) typical 22 nC —
Total Gate Charge P-Ch (Q_g) typical 23 nC —
Power Dissipation (P_D) 2.5 W —
Technology Generation V HEXFET HEXFET Generation V (IR MOSFET)
Gehäuse SO-8 (SOIC-8) surface mount 8-SO (SOIC-8)
Pinout Industry-standard complementary SO-8 —
Betriebstemperaturbereich [DATA_NEEDED: full operating temperature range] —
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Lead-Free Yes —
Halogenfrei Yes —
Avalanche Rated Yes (fully avalanche rated) Yes
Transistor Polarity — N and P Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (N-Ch, Id) — 7.3 A
Continuous Drain Current (P-Ch, Id) — -5.3 A
On-Resistance RDS(on) Max — 29 mOhm
Power Dissipation (Pd) — 2.5 W
Betriebstemperatur — -55C to +150C
Lead Free / RoHS — Lead Free / RoHS Compliant
MSL-Level — 1
Manufacturer — Infineon (formerly International Rectifier)

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