IRF7389PBF vs IRF7389TRPBF 对比
详细并排对比 IRF7389PBF 出自 Infineon 和 IRF7389TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7389PBF | IRF7389TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.61 | $0.58 |
| Configuration | N and P-Channel (complementary half-bridge) | Dual N+P Complementary Half-Bridge |
| Drain-to-Source Voltage N-Ch (V_DSS) | 30 V | — |
| Drain-to-Source Voltage P-Ch (V_DSS) | -30 V | — |
| Continuous Drain Current N-Ch (I_D) | 7.3 A | — |
| Continuous Drain Current P-Ch (I_D) | -5.3 A | — |
| On-Resistance N-Ch R_DS(on) max | 0.029 ohm at V_GS=10V | — |
| On-Resistance P-Ch R_DS(on) max | 0.058 ohm at V_GS=10V | — |
| Total Gate Charge N-Ch (Q_g) typical | 22 nC | — |
| Total Gate Charge P-Ch (Q_g) typical | 23 nC | — |
| Power Dissipation (P_D) | 2.5 W | — |
| Technology | Generation V HEXFET | HEXFET Generation V (IR MOSFET) |
| 封装 | SO-8 (SOIC-8) surface mount | 8-SO (SOIC-8) |
| Pinout | Industry-standard complementary SO-8 | — |
| 工作温度范围 | [DATA_NEEDED: full operating temperature range] | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Transistor Polarity | — | N and P Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (N-Ch, Id) | — | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | — | -5.3 A |
| On-Resistance RDS(on) Max | — | 29 mOhm |
| Power Dissipation (Pd) | — | 2.5 W |
| 工作温度 | — | -55C to +150C |
| Lead Free / RoHS | — | Lead Free / RoHS Compliant |
| MSL 等级 | — | 1 |
| Manufacturer | — | Infineon (formerly International Rectifier) |