IRF7389PBF vs IRF7389TRPBF Comparison

Detailed side-by-side comparison of IRF7389PBF by Infineon and IRF7389TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7389PBF IRF7389TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.58
Configuration N and P-Channel (complementary half-bridge) Dual N+P Complementary Half-Bridge
Drain-to-Source Voltage N-Ch (V_DSS) 30 V β€”
Drain-to-Source Voltage P-Ch (V_DSS) -30 V β€”
Continuous Drain Current N-Ch (I_D) 7.3 A β€”
Continuous Drain Current P-Ch (I_D) -5.3 A β€”
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V β€”
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V β€”
Total Gate Charge N-Ch (Q_g) typical 22 nC β€”
Total Gate Charge P-Ch (Q_g) typical 23 nC β€”
Power Dissipation (P_D) 2.5 W β€”
Technology Generation V HEXFET HEXFET Generation V (IR MOSFET)
Package SO-8 (SOIC-8) surface mount 8-SO (SOIC-8)
Pinout Industry-standard complementary SO-8 β€”
Operating Temperature Range [DATA_NEEDED: full operating temperature range] β€”
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Lead-Free Yes β€”
Halogen-Free Yes β€”
Avalanche Rated Yes (fully avalanche rated) Yes
Transistor Polarity β€” N and P Channel
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (N-Ch, Id) β€” 7.3 A
Continuous Drain Current (P-Ch, Id) β€” -5.3 A
On-Resistance RDS(on) Max β€” 29 mOhm
Power Dissipation (Pd) β€” 2.5 W
Operating Temperature β€” -55C to +150C
Lead Free / RoHS β€” Lead Free / RoHS Compliant
MSL Level β€” 1
Manufacturer β€” Infineon (formerly International Rectifier)

Datasheets & Resources

Browse All Products Create BOM Request Quote