IRFH5015TRPBF vs IRF8734TRPBF Vergleich
Detaillierter Direktvergleich von IRFH5015TRPBF von Infineon und IRF8734TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFH5015TRPBF | IRF8734TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,48 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Gehäuse | 8-PQFN (5x6) SuperSO8 | — |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Betriebstemperatur | -55C to +150C (TJ max) | — |
| RoHS-Status | Compliant | Compliant (PBF suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.5 mOhm |
| Gate Charge (Qg) typ | — | 20 nC |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Gehäuse / Bauform | — | 8-SOIC (SO-8) |
| Betriebstemperaturbereich | — | -55C to +150C (junction) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Avalanche Energy Rating | — | Fully characterized avalanche voltage |
| Lead-Free / Halogen-Free | — | Lead-free (PBF suffix) |
| MSL-Level | — | [DATA_NEEDED: MSL rating per J-STD-020] |
| Packaging | — | Tape & Reel (TR) |