IRFH5015TRPBF vs IRF8734TRPBF 对比

详细并排对比 IRFH5015TRPBF 出自 Infineon 和 IRF8734TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFH5015TRPBF IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF ✓ 量产中

规格对比

参数 IRFH5015TRPBF IRF8734TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.48
FET Type N-Channel —
Technology IR MOSFET (HEXFET) StrongIRFET™ (HEXFET)
Drain-Source Voltage (VDS) 150 V 30 V
Continuous Drain Current (ID) at TA=25C 10 A —
Continuous Drain Current (ID) at TC=25C 56 A —
On-Resistance (RDS(on)) max 31 mOhm —
Total Gate Charge (Qg) 33 nC —
Power Dissipation (TA=25C) 3.6 W —
Power Dissipation (TC=25C) 156 W —
Gate Drive Voltage (VGS recommended) 10 V —
封装 8-PQFN (5x6) SuperSO8 —
安装类型 Surface Mount Surface Mount
Configuration Single with built-in body diode —
工作温度 -55C to +150C (TJ max) —
RoHS 状态 Compliant Compliant (PBF suffix)
Manufacturer — Infineon Technologies (formerly International Rectifier)
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 21 A
On-Resistance RDS(on) max at VGS=10V — 3.5 mOhm
Gate Charge (Qg) typ — 20 nC
Power Dissipation (PD) at Ta — 2.5 W
封装 / 外壳 — 8-SOIC (SO-8)
工作温度范围 — -55C to +150C (junction)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Avalanche Energy Rating — Fully characterized avalanche voltage
Lead-Free / Halogen-Free — Lead-free (PBF suffix)
MSL 等级 — [DATA_NEEDED: MSL rating per J-STD-020]
Packaging — Tape & Reel (TR)

数据手册与资源

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