IRFP250MPBF vs IRFP250N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFP250MPBF sa pamamagitan ng Infineon at IRFP250N sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFP250N - 200V 30A N-Channel HEXFET MOSFET | Infineon (Lead-Free (Pb-Free))
IRFP250N ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFP250MPBF | IRFP250N |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFP250MPBF | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | N-Channel HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging / Kaso | TO-247AC (3-pin + tab) | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Bilang ng Pins | 3 | — |
| Avalanche Rated | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (unlimited) | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 214 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Packhaging | — | TO-247AC (through-hole) |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (TJ) |
| Avalanche Energy Rating | — | Fully avalanche rated |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Switching Frequency Optimization | — | Optimized for applications below 100 kHz |
| Qualification Standard | — | JEDEC |
| Lead-Free Status | — | Yes (PBF suffix) |
| Planar Cell Structure | — | Yes (wide SOA) |