IRFR3806TRPBF vs IRFR2405TRLPBF Vergleich
Detaillierter Direktvergleich von IRFR3806TRPBF von Infineon und IRFR2405TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR3806TRPBF | IRFR2405TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,55 |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | 55 V |
| Continuous Drain Current (ID) at Tc | 43 A | 56 A |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | — |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| Gehäuse / Bauform | TO-252AA (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET, 7th generation) |
| Betriebstemperaturbereich | -55 C to +175 C | -55 C to +175 C (junction) |
| Gate-Source Voltage (VGS) max | +/- 20 V | ±20 V |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Avalanche Rated | Yes (HEXFET family) | — |
| Transistortyp | — | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | — | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gehäuse | — | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Packaging | — | Tape & Reel (TR) |