IRFR3806TRPBF vs IRFR2405TRLPBF Comparison

Detailed side-by-side comparison of IRFR3806TRPBF by Infineon and IRFR2405TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR3806TRPBF IRFR2405TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.55
Transistor Polarity N-Channel β€”
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) at Tc 43 A 56 A
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V β€”
Total Gate Charge (Qg) 22 nC β€”
Power Dissipation (Pd) at Tc = 25 C 71 W β€”
Package / Case TO-252AA (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 7th generation)
Operating Temperature Range -55 C to +175 C -55 C to +175 C (junction)
Gate-Source Voltage (VGS) max +/- 20 V Β±20 V
Number of Units in IC 1 β€”
Lead-Free / RoHS Yes (PBF suffix, lead-free) Yes, PBF suffix indicates lead-free and RoHS compliant
Avalanche Rated Yes (HEXFET family) β€”
Transistor Type β€” N-Channel MOSFET
Pulsed Drain Current (IDM) β€” 200 A (typical, per datasheet family)
On-Resistance RDS(on) max @ VGS=10V β€” 16 mOhm
Gate Charge (Qg) typical β€” 70 nC
Power Dissipation (PD) at Tc β€” 110 W
Package β€” TO-252AA (DPAK), 3-pin (2 + Tab)
Avalanche Energy Rated β€” Yes (HEXFET ruggedized design)
Packaging β€” Tape & Reel (TR)

Datasheets & Resources

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