IRFR3806TRPBF vs IRFR2405TRLPBF 对比

详细并排对比 IRFR3806TRPBF 出自 Infineon 和 IRFR2405TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF ✓ 量产中

规格对比

参数 IRFR3806TRPBF IRFR2405TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.52 $0.55
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) at Tc 43 A 56 A
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC —
Power Dissipation (Pd) at Tc = 25 C 71 W —
封装 / 外壳 TO-252AA (DPAK) —
安装类型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 7th generation)
工作温度范围 -55 C to +175 C -55 C to +175 C (junction)
Gate-Source Voltage (VGS) max +/- 20 V ±20 V
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) Yes, PBF suffix indicates lead-free and RoHS compliant
Avalanche Rated Yes (HEXFET family) —
晶体管类型 — N-Channel MOSFET
Pulsed Drain Current (IDM) — 200 A (typical, per datasheet family)
On-Resistance RDS(on) max @ VGS=10V — 16 mOhm
Gate Charge (Qg) typical — 70 nC
Power Dissipation (PD) at Tc — 110 W
封装 — TO-252AA (DPAK), 3-pin (2 + Tab)
Avalanche Energy Rated — Yes (HEXFET ruggedized design)
Packaging — Tape & Reel (TR)

数据手册与资源

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